The containment of the fields within the waveguide is clearly visible as the signal turns the corner and continues.

A two-dimensional array of photonic crystals with a curved line defect are simulated in XFdtd^®. The crystal geometry is a two-dimensional array of rods, each 0.18125 microns on a side and spaced at a period of 0.58 microns with a curved waveguide line defect introduced by removing several rows of rods as shown in Figure 1. The dielectric properties of gallium arsenide (n=3.4) are assigned to the rods in the XFdtd mesh. A ramped sinusoidal input source centered at 1.55 microns is applied to the crystal by introducing an electric field at a cell edge in the center of the waveguide.

The propagation of the applied signal is shown in Figures 2 - 8. The containment of the fields within the waveguide is clearly visible as the signal turns the corner and continues. Figure 9 shows the frequency content of the four sample points (shown in Figure 1) where points 1-3 are within the waveguide region and contain the input signal while point 4 is within the crystal and only contains frequencies outside the band gap.